Extremely Nondegenerate Two-Photon Absorption and Sub-bandgap Detection in Semiconductors
نویسندگان
چکیده
Fig1: (a) Femtosecond pump-probe results: D and ND 2PA coefficient of ZnSe versus the sum of pump and probe photon energies normalized to the bandgap: solid lines are theoretical model. (b) Log-log plot of the output voltage of a GaN diode vs. 5.6 μm (215 fs) input signal energy in the presence of temporally overlapped 390 nm gating pulses (100 fs) of various energies. The grey filled in squares show data for the MCT detector. Extremely Nondegenerate Two-Photon Absorption and Sub-bandgap Detection in Semiconductors
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